We have calculated the density of the quantum state in the conduction band (N _C) for series stress addition to GaAs thin film along [100], [010] and [001] direction. We present here the results of our investigation of the electronic parameter affected by the stress. Within the range of 0.02–0.2 GPa, we find that the value of N _C decreases about 1.0 x 10²¹ cm^–3 from the free status of films. The results reveal that the stresses on GaAs film are extremely important and impact its electronic properties.